Invention Grant
- Patent Title: Semiconductor devices comprising 2D-materials and methods of manufacture thereof
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Application No.: US14753851Application Date: 2015-06-29
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Publication No.: US10403744B2Publication Date: 2019-09-03
- Inventor: Shih-Yen Lin , Samuel C. Pan , Chong-Rong Wu , Xian-Rui Chang
- Applicant: National Taiwan University , Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu TW Taipei
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.,National Taiwan University
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.,National Taiwan University
- Current Assignee Address: TW Hsin-Chu TW Taipei
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/786
- IPC: H01L21/786 ; H01L29/778 ; H01L21/02 ; C30B25/16 ; C30B29/46 ; H01L21/66 ; C30B29/60
Abstract:
A method for manufacturing a semiconductor device comprising two-dimensional (2D) materials may include: epitaxially forming a first two-dimensional (2D) material layer over a substrate; calculating a mean thickness of the first 2D material layer; comparing the mean thickness of the first 2D material layer with a reference parameter; determining that the mean thickness of the first 2D material layer is not substantially equal to the reference parameter; and after the determining, epitaxially forming a second 2D material layer over the first 2D material layer.
Public/Granted literature
- US20160379901A1 Semiconductor Devices Comprising 2D-Materials and Methods of Manufacture Thereof Public/Granted day:2016-12-29
Information query
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