Invention Grant
- Patent Title: Semiconductor devices with regrown contacts and methods of fabrication
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Application No.: US15856442Application Date: 2017-12-28
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Publication No.: US10403718B2Publication Date: 2019-09-03
- Inventor: Jenn Hwa Huang , Yuanzheng Yue
- Applicant: NXP USA, Inc.
- Applicant Address: US TX Austin
- Assignee: NXP USA, Inc.
- Current Assignee: NXP USA, Inc.
- Current Assignee Address: US TX Austin
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L29/66 ; H01L29/778 ; H01L29/20 ; H01L29/78
Abstract:
An embodiment of a semiconductor device includes a semiconductor substrate that includes a channel, a first dielectric layer disposed over the semiconductor substrate, and a regrown contact formed through a first opening in the first dielectric layer. The regrown contact includes a regrown region formed over the semiconductor substrate, an overhang region coupled to the regrown region and formed over the first dielectric layer, adjacent the first opening, and a conductive cap formed over the regrown region and the overhang region. A method for fabricating the semiconductor device includes forming the first dielectric layer over the semiconductor substrate, forming the first opening in the first dielectric layer, forming a regrown semiconductor layer within the first opening and over the first dielectric layer, forming a conductive cap over the regrown semiconductor layer, and etching the regrown semiconductor layer outside the conductive cap.
Public/Granted literature
- US20190206998A1 SEMICONDUCTOR DEVICES WITH REGROWN CONTACTS AND METHODS OF FABRICATION Public/Granted day:2019-07-04
Information query
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