Invention Grant
- Patent Title: Semiconductor device and method for manufacturing semiconductor device, solid-state image pickup element, image pickup device, and electronic apparatus
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Application No.: US15535534Application Date: 2016-01-04
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Publication No.: US10403675B2Publication Date: 2019-09-03
- Inventor: Atsushi Fujiwara
- Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Applicant Address: JP Kanagawa
- Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Current Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Current Assignee Address: JP Kanagawa
- Agency: Chip Law Group
- Priority: JP2015-004096 20150113
- International Application: PCT/JP2016/050013 WO 20160104
- International Announcement: WO2016/114152 WO 20160721
- Main IPC: H01L21/78
- IPC: H01L21/78 ; H01L27/14 ; H04N5/369 ; H01L27/146

Abstract:
The present technology relates to a semiconductor device that suppresses scattering dusts caused by dicing, chipping due to clogging, and further suppresses peel-off of an undercoat from a passivation film, thereby improving yields in manufacturing to realize cost reduction and a method for manufacturing the semiconductor device, a solid-state image pickup element, an image pickup device, and an electronic apparatus. In a step of exposing a pad by etching, when etching a lens material layer as an uppermost layer and a passivation layer, a pad portion and a blade region to be cut by a blade at the time of dicing are simultaneously etched, while a part of a region including both portions and a part therebetween or all the region on the lump, is simultaneously etched. Thereafter, in a layer of the semiconductor substrate under the lens material layer, only the pad portion is etched to expose the pad.
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