Invention Grant
- Patent Title: Semiconductor device
-
Application No.: US15796329Application Date: 2017-10-27
-
Publication No.: US10403644B2Publication Date: 2019-09-03
- Inventor: Masaki Tamaru
- Applicant: Socionext Inc.
- Applicant Address: JP Kanagawa
- Assignee: SOCIONEXT INC.
- Current Assignee: SOCIONEXT INC.
- Current Assignee Address: JP Kanagawa
- Agency: McDermott Will & Emery LLP
- Priority: JP2010-239997 20101026
- Main IPC: H01L27/118
- IPC: H01L27/118 ; H01L23/485 ; H01L21/768 ; H01L27/02 ; H01L29/10

Abstract:
A local interconnect is formed in contact with an upper surface of an impurity diffusion region and extends to below a potential supply interconnect. A contact hole electrically couples the local interconnect to the potential supply interconnect. The local interconnect, which is formed in contact with the upper surface of the impurity diffusion region, is used for electrically coupling the impurity diffusion region to the potential supply interconnect.
Public/Granted literature
- US20180053783A1 SEMICONDUCTOR DEVICE Public/Granted day:2018-02-22
Information query
IPC分类: