Invention Grant
- Patent Title: Semiconductor devices including ferroelectric materials
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Application No.: US16059672Application Date: 2018-08-09
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Publication No.: US10403630B2Publication Date: 2019-09-03
- Inventor: Qian Tao , Matthew N. Rocklein , Beth R. Cook , D. V. Nirmal Ramaswamy
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L27/11507
- IPC: H01L27/11507 ; H01L45/00 ; H01L49/02
Abstract:
A method of forming a ferroelectric memory cell. The method comprises forming an electrode material exhibiting a desired dominant crystallographic orientation. A hafnium-based material is formed over the electrode material and the hafnium-based material is crystallized to induce formation of a ferroelectric material having a desired crystallographic orientation. Additional methods are also described, as are semiconductor device structures including the ferroelectric material.
Public/Granted literature
- US20180350824A1 SEMICONDUCTOR DEVICES INCLUDING FERROELECTRIC MATERIALS Public/Granted day:2018-12-06
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