Invention Grant
- Patent Title: Method of manufacturing a semiconductor device
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Application No.: US15971274Application Date: 2018-05-04
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Publication No.: US10403616B2Publication Date: 2019-09-03
- Inventor: Kenichiro Sato
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kawasaki-shi, Kanagawa
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kawasaki-shi, Kanagawa
- Agency: Rabin and Berdo, P.C.
- Priority: JP2014-044683 20140307
- Main IPC: H01L21/52
- IPC: H01L21/52 ; H01L25/18 ; H01L21/67 ; H01L23/495 ; H01L23/00 ; H01L25/00 ; H01L25/07

Abstract:
A method of manufacturing a semiconductor device that includes an insulated circuit board having a conductive pattern, a first semiconductor chip with a rectangular shape connected through a first joining material to the conductive pattern, a second semiconductor chip with a rectangular shape disposed on the conductive pattern separated from the first semiconductor chip and connected through a second joining material to the conductive pattern, a terminal disposed above the semiconductor chips, respectively connected to the first and second semiconductor chips through third and fourth joining materials, the terminal having a through-hole above a place between the first and second semiconductor chips, the method including a positioning step in which the first and second semiconductor chips are respectively positioned at at least three positioning places, and at least one of the positioning places is positioned with a positioning member inserted into the through-hole.
Public/Granted literature
- US20180254267A1 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE Public/Granted day:2018-09-06
Information query
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