Invention Grant
- Patent Title: Direct bonding method
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Application No.: US15747246Application Date: 2016-06-29
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Publication No.: US10403597B2Publication Date: 2019-09-03
- Inventor: Paul Gondcharton , Lamine Benaissa , Bruno Imbert , Guillaume Rodriguez , Chiara Sabbione
- Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Applicant Address: FR Paris
- Assignee: COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Current Assignee: COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Current Assignee Address: FR Paris
- Agency: Oliff PLC
- Priority: FR1557117 20150724
- International Application: PCT/FR2016/051621 WO 20160629
- International Announcement: WO2017/017325 WO 20170202
- Main IPC: H01L23/00
- IPC: H01L23/00 ; B81C3/00 ; H01L21/20 ; H01L21/02
Abstract:
A bonding between a first substrate and a second substrate, the method includes the steps of: a) providing the first substrate and the second substrate, b) forming a first bonding layer having tungsten oxide on the first substrate and a second bonding layer having tungsten oxide on the second substrate, at least one of the first bonding layer and of the second bonding layer including a third element M so as to form an MWxOy-type alloy, the atomic content of M in the composition of the alloy being between 0.5 and 20% and preferably between 1 and 10%, c) carrying out a direct bonding between the first bonding layer and the second bonding layer, and d) performing a heat treatment at a temperature greater than 250° C.
Public/Granted literature
- US20180218999A1 DIRECT BONDING METHOD Public/Granted day:2018-08-02
Information query
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