Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15976388Application Date: 2018-05-10
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Publication No.: US10403569B2Publication Date: 2019-09-03
- Inventor: Ryuichi Oikawa
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP2017-124553 20170626
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L23/498 ; H01L23/66
Abstract:
To improve signal transmission characteristics of a high frequency signal of 80 GHz or higher. A semiconductor device includes a wiring board having a structure in which a signal via structure and a grounding via structure have mutually overlapping portions in plan view.
Public/Granted literature
- US20180374787A1 SEMICONDUCTOR DEVICE Public/Granted day:2018-12-27
Information query
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