- Patent Title: Si-containing film forming precursors and methods of using the same
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Application No.: US15692544Application Date: 2017-08-31
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Publication No.: US10403494B2Publication Date: 2019-09-03
- Inventor: Jean-Marc Girard , Peng Zhang , Antonio Sanchez , Manish Khandelwal , Gennadiy Itov , Reno Pesaresi
- Applicant: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
- Applicant Address: FR Paris
- Assignee: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
- Current Assignee: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
- Current Assignee Address: FR Paris
- Agent Patricia E. McQueeney; Allen E. White
- Main IPC: H01L21/02
- IPC: H01L21/02 ; C07F7/02 ; C01B21/087 ; C01B21/088 ; C23C16/30 ; C23C16/34 ; C23C16/40 ; C23C16/455 ; C23C16/515
Abstract:
Mono-substituted TSA precursor Si-containing film forming compositions are disclosed. The precursors have the formula: (SiH3)2N—SiH2—X, wherein X is selected from a halogen atom; an isocyanato group; an amino group; an N-containing C4-C10 saturated or unsaturated heterocycle; or an alkoxy group. Methods for forming the Si-containing film using the disclosed mono-substituted TSA precursor are also disclosed.
Public/Granted literature
- US20180022761A1 Si-CONTAINING FILM FORMING PRECURSORS AND METHODS OF USING THE SAME Public/Granted day:2018-01-25
Information query
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