Invention Grant
- Patent Title: Magnetic memory device
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Application No.: US15918344Application Date: 2018-03-12
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Publication No.: US10403381B2Publication Date: 2019-09-03
- Inventor: Michael Arnaud Quinsat , Takuya Shimada , Susumu Hashimoto , Nobuyuki Umetsu , Yasuaki Ootera , Masaki Kado , Tsuyoshi Kondo , Shiho Nakamura , Tomoya Sanuki , Yoshihiro Ueda , Yuichi Ito , Shinji Miyano , Hideaki Aochi , Yasuhito Yoshimizu
- Applicant: Toshiba Memory Corporation
- Applicant Address: JP Tokyo
- Assignee: Toshiba Memory Corporation
- Current Assignee: Toshiba Memory Corporation
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2017-179563 20170919
- Main IPC: G11C19/08
- IPC: G11C19/08 ; H01L43/08 ; H01L43/10

Abstract:
According to one embodiment, a magnetic memory device includes a first magnetic member, a first electrode, a first magnetic layer, a first non-magnetic layer, a first conductive layer and a controller. The first magnetic member includes a first extending portion and a third magnetic portion. The first extending portion includes first and second magnetic portions. The third magnetic portion is connected with the second magnetic portion. The first electrode is electrically connected with the first magnetic portion. The first non-magnetic layer is provided between the first magnetic layer and at least a part of the third magnetic portion. The first conductive layer includes first and second conductive portions, and a third conductive portion being between the first conductive portion and the second conductive portion. The controller is electrically connected with the first electrode, the first magnetic layer, the first conductive portion and the second conductive portion.
Public/Granted literature
- US20190088345A1 MAGNETIC MEMORY DEVICE Public/Granted day:2019-03-21
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