Invention Grant
- Patent Title: Memory system with adaptive read-threshold scheme and method of operating such memory system
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Application No.: US16028050Application Date: 2018-07-05
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Publication No.: US10403372B2Publication Date: 2019-09-03
- Inventor: Aman Bhatia , Chenrong Xiong , Fan Zhang , Naveen Kumar , Yu Cai
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Main IPC: G11C16/26
- IPC: G11C16/26 ; G11C11/56 ; G11C29/42 ; G06F11/30 ; G06F11/34 ; G11C8/10 ; G11C16/28 ; G11C29/02 ; G11C7/14 ; G11C16/04

Abstract:
Adaptive read-threshold schemes for a memory system determine read-threshold with the lowest BER/UECC failure-rates while continuing to serve the host-reads with the required QoS. When it is determined that the QoS or other quality metric is not met for a particular read-threshold, which may be an initial, default, read-threshold, the performance of other read-thresholds are estimated. These estimates may then be used to determine an optimal read-threshold. During the iterative process, selection variables, e.g., how many times, and for which read commands, to use each of the non-default read-thresholds in future read-attempts may be determined on-the-fly.
Public/Granted literature
- US20190066803A1 MEMORY SYSTEM WITH ADAPTIVE READ-THRESHOLD SCHEME AND METHOD OF OPERATING SUCH MEMORY SYSTEM Public/Granted day:2019-02-28
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