Invention Grant
- Patent Title: Switch module, memory storage device and multiplexer
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Application No.: US15452742Application Date: 2017-03-08
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Publication No.: US10403365B2Publication Date: 2019-09-03
- Inventor: Wei-Shin Chang , Wei-Yung Chen
- Applicant: PHISON ELECTRONICS CORP.
- Applicant Address: TW Miaoli
- Assignee: PHISON ELECTRONICS CORP.
- Current Assignee: PHISON ELECTRONICS CORP.
- Current Assignee Address: TW Miaoli
- Agency: JCIPRNET
- Priority: TW106101109A 20170113
- Main IPC: H02H9/04
- IPC: H02H9/04 ; G11C16/10 ; H01L27/02 ; G11C7/10 ; G11C29/04

Abstract:
An exemplary embodiment of the disclosure provides a switch module which includes a first conductive unit, a first switch unit and a first electrostatic protection module. The first electrostatic protection module is coupled between the first conductive unit and the first switch unit. The first electrostatic protection module includes a first protection circuit and a first inductor circuit. The first inductor circuit includes a first inductor unit, and the first inductor circuit is coupled between the first protection circuit and the first conductive unit. Accordingly, the transmission efficiency of the switch (or multiplexer) for high speed signal can be improved.
Public/Granted literature
- US20180205224A1 SWITCH MODULE, MEMORY STORAGE DEVICE AND MULTIPLEXER Public/Granted day:2018-07-19
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