Apparatuses and methods are disclosed that include ferroelectric memory and for refreshing ferroelectric memory. An example apparatus includes: a word line; a first memory cell coupled to a first digit line and stores a first data on the first digit line responsive to the word line in an active state; a second memory cell coupled to a second digit line and stores a second data on the second digit line responsive to the word line in the active state. The first digit line is coupled to a first power potential and the second digit line is coupled to a second power potential in a refresh operation.