Invention Grant
- Patent Title: Hybrid flash memory structure
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Application No.: US16011673Application Date: 2018-06-19
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Publication No.: US10403342B2Publication Date: 2019-09-03
- Inventor: Zhijiong Luo , Shu Wang , Xiaoming Jin
- Applicant: Aspiring Sky Co. Limited
- Applicant Address: CN Hong Kong
- Assignee: Aspiring Sky Co. Limited
- Current Assignee: Aspiring Sky Co. Limited
- Current Assignee Address: CN Hong Kong
- Agency: Turk IP Law, LLC
- Main IPC: G11C7/10
- IPC: G11C7/10 ; G11C11/00 ; G11C7/06 ; G06F3/06 ; G06F12/06 ; G11C13/00 ; G11C16/08 ; G11C16/10 ; G11C16/26 ; G11C16/28 ; G06F12/02 ; G11C8/10

Abstract:
A memory system includes a code flash and data flash merged flash memory, which may contain a code flash with differential cell structure, a data flash with single cell structure, decoder circuitry, a sense amplifier, and other suitable support circuitry. The code flash and data flash may be located in a same plane or multi planes. In some examples, the code flash may be also accessed to read while the data flash is performing write operation, and vice versa.
Public/Granted literature
- US20180366170A1 HYBRID FLASH MEMORY STRUCTURE Public/Granted day:2018-12-20
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