Invention Grant
- Patent Title: Memory cell having magnetic tunnel junction and thermal stability enhancement layer
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Application No.: US15656398Application Date: 2017-07-21
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Publication No.: US10381553B2Publication Date: 2019-08-13
- Inventor: Mustafa Pinarbasi , Bartek Kardasz
- Applicant: Spin Memory, Inc.
- Applicant Address: US CA Fremont
- Assignee: Spin Transfer Technologies, Inc.
- Current Assignee: Spin Transfer Technologies, Inc.
- Current Assignee Address: US CA Fremont
- Agency: Arnold & Porter Kaye Scholer LLP
- Main IPC: H01L43/08
- IPC: H01L43/08 ; H01L43/02 ; H01L43/10 ; H01L43/12 ; H01L27/22 ; G11C11/16
Abstract:
A magnetoresistive random-access memory (MRAM) device is disclosed. The device described herein has a thermal stability enhancement layer over the free layer of a magnetic tunnel junction. The thermal stability enhancement layer improves the thermal stability of the free layer, increases the magnetic moment of the free layer, while also not causing the magnetic direction of the free layer to become in plan. The thermal stability enhancement layer can be include a layer of CoFeB ferromagnetic material.
Public/Granted literature
- US20170324029A1 MEMORY CELL HAVING MAGNETIC TUNNEL JUNCTION AND THERMAL STABILITY ENHANCEMENT LAYER Public/Granted day:2017-11-09
Information query
IPC分类:
