A quantum dot LED and a manufacturing method for the same are disclosed. The quantum dot LED includes a pair of electrodes disposed separately and side by side; an LED chip disposed on the pair of electrodes and electrically connected to the pair of electrodes; a quantum dot layer disposed on the LED chip; a glue layer disposed on the quantum dot layer; and an inorganic encapsulation layer that packages and covers the pair of electrodes, the LED chip, the quantum dot layer and the glue layer. The present invention can provide a water and oxygen isolation environment, which is beneficial to increase the luminous efficiency and life of the quantum dots. Adopting an atomic layer deposition method to form the inorganic encapsulation layer, the surface is smooth and even in thickness, the problem of cracking of the film layer will not generate.