Invention Grant
- Patent Title: Tunnel field effect trasnsistor
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Application No.: US15764426Application Date: 2016-09-27
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Publication No.: US10381489B2Publication Date: 2019-08-13
- Inventor: Takashi Fukui , Katsuhiro Tomioka
- Applicant: NATIONAL UNIVERSITY CORPORATION HOKKAIDO UNIVERSITY , JAPAN SCIENCE AND TECHNOLOGY AGENCY
- Applicant Address: JP Sapporo-shi, Hokkaido JP Kawaguchi-shi, Saitama
- Assignee: National University Corporation Hokkaido University,Japan Science and Technology Agency
- Current Assignee: National University Corporation Hokkaido University,Japan Science and Technology Agency
- Current Assignee Address: JP Sapporo-shi, Hokkaido JP Kawaguchi-shi, Saitama
- Agency: Brundidge & Stanger, P.C.
- Priority: JP2015-193196 20150930
- International Application: PCT/JP2016/078393 WO 20160927
- International Announcement: WO2017/057329 WO 20170604
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L29/66 ; H01L29/778 ; H01L29/78 ; H01L27/095 ; H01L29/808 ; H01L29/812 ; H01L29/06 ; H01L29/04 ; H01L29/205
Abstract:
The tunnel field effect transistor according to the present invention has: a channel; a source electrode connected directly or indirectly to one end of the channel; a drain electrode connected directly or indirectly to the other end of the channel; and a gate electrode for causing an electric field to act on the channel, generating a tunnel phenomenon at the source electrode-side joint part of the channel, and simultaneously generating a two-dimensional electron gas in the channel.
Public/Granted literature
- US20180294362A1 TUNNEL FIELD EFFECT TRANSISTOR Public/Granted day:2018-10-11
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