Invention Grant
- Patent Title: Semiconductor device with localized carrier lifetime reduction and fabrication method thereof
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Application No.: US15614030Application Date: 2017-06-05
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Publication No.: US10381259B2Publication Date: 2019-08-13
- Inventor: Alex Kalnitsky , Chih-Wen Yao , Jun Cai , Ruey-Hsin Liu , Hsiao-Chin Tuan
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: H01L21/265
- IPC: H01L21/265 ; H01L21/762 ; H01L21/8238 ; H01L27/092 ; H01L21/8234 ; H01L29/10
Abstract:
A method of fabricating a semiconductor structure includes forming an isolation feature in a substrate, removing a portion of the isolation feature and a portion of the substrate underneath the removed portion of the isolation feature to form a trench in the substrate, and forming a trapping feature around a bottom portion of the trench. A first sidewall and a second sidewall of the trench are in direct contact with the isolation feature, and a bottom surface of the trench is below a bottom surface of the isolation feature.
Public/Granted literature
- US20170271199A1 SEMICONDUCTOR DEVICE WITH LOCALIZED CARRIER LIFETIME REDUCTION AND FABRICATION METHOD THEREOF Public/Granted day:2017-09-21
Information query
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