Invention Grant
- Patent Title: Substrate treatment method, computer storage medium and substrate treatment system
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Application No.: US16033537Application Date: 2018-07-12
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Publication No.: US10381222B2Publication Date: 2019-08-13
- Inventor: Shinji Kobayashi
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Posz Law Group, PLC
- Priority: JP2017-150354 20170803
- Main IPC: H01L21/66
- IPC: H01L21/66 ; H01L21/033

Abstract:
A substrate treatment method of performing a plurality of predetermined treatments on a substrate to form a plurality of patterns stacked on the substrate, the substrate treatment method includes: a calculation step of calculating, about patterns in two layers stacked on the substrate, a mutual pattern displacement amount being a displacement amount between the patterns in the two layers, based on an end portion positional displacement of a pattern in an upper layer, an end portion positional displacement of a pattern in a lower layer, and an overlay of the patterns in the two layers; and a correction step of correcting, when the mutual pattern displacement amount exceeds a predetermined threshold, treatment conditions in the predetermined treatments to make the mutual pattern displacement amount fall within the predetermined threshold.
Public/Granted literature
- US20190043722A1 SUBSTRATE TREATMENT METHOD, COMPUTER STORAGE MEDIUM AND SUBSTRATE TREATMENT SYSTEM Public/Granted day:2019-02-07
Information query
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