Invention Grant
- Patent Title: Reduction in the annealing temperature of an IGZO layer obtained by sol gel
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Application No.: US15905359Application Date: 2018-02-26
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Publication No.: US10381220B2Publication Date: 2019-08-13
- Inventor: Mohammed Benwadih , Christine Revenant-Brizard
- Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Applicant Address: FR Paris
- Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Current Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Current Assignee Address: FR Paris
- Agency: Oblon, McClelland, Mauer & Neustadt, L.L.P.
- Priority: FR1715675 20170301
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/786 ; H01L29/24
Abstract:
The present application relates to a method for forming an active zone of metal oxide for an electronic component including the formation of a stack of IXZO layers produced by liquid phase deposition on a substrate, the layers of said stack having different atomic fractions to each other in order to make it possible to reduce the annealing temperature enabling them to be made functional.
Public/Granted literature
- US20180254185A1 REDUCTION IN THE ANNEALING TEMPERATURE OF AN IGZO LAYER OBTAINED BY SOL GEL Public/Granted day:2018-09-06
Information query
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