Invention Grant
- Patent Title: Semiconductor memory system performing read operation based on counted memory cells and operating method thereof
-
Application No.: US15873081Application Date: 2018-01-17
-
Publication No.: US10381089B2Publication Date: 2019-08-13
- Inventor: Woo-Hyun Kim
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2017-0067483 20170531
- Main IPC: G06F11/10
- IPC: G06F11/10 ; G11C16/28 ; G11C11/56 ; G11C16/30 ; G11C29/52 ; G11C16/08 ; G11C29/02 ; G11C29/04

Abstract:
A semiconductor apparatus comprising: a memory device including at least a word line; and a controller suitable for controlling the memory device to perform a write operation and a read operation, wherein the controller includes a counting unit suitable for counting a number of memory cells coupled to the word line for respective threshold voltages, and wherein the controller controls the memory device to perform a read operation based on the counted number of memory cells for the respective threshold voltages.
Public/Granted literature
- US20180350441A1 SEMICONDUCTOR MEMORY SYSTEM AND OPERATING METHOD THEREOF Public/Granted day:2018-12-06
Information query