Invention Grant
- Patent Title: Dual port static random access memory (DPSRAM) cell
-
Application No.: US15992130Application Date: 2018-05-29
-
Publication No.: US10381056B2Publication Date: 2019-08-13
- Inventor: Tien-Yu Lu , Chun-Hsien Huang , Ching-Cheng Lung , Yu-Tse Kuo , Shou-Sian Chen , Koji Nii , Yuichiro Ishii
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN201810007557 20180104
- Main IPC: G11C8/16
- IPC: G11C8/16 ; G11C8/08 ; H01L27/11 ; G11C11/412 ; G11C7/12

Abstract:
A dual port static random access memory (DPSRAM) cell includes a first power line, a first bit line and a second bit line. The first power line is disposed between a first word line and a second word line. The first bit line is disposed between the first word line and the first power line. The second bit line is disposed between the second word line and the first power line.
Public/Granted literature
- US20190206459A1 DUAL PORT STATIC RANDOM ACCESS MEMORY (DPSRAM) CELL Public/Granted day:2019-07-04
Information query