Invention Grant
- Patent Title: Self-adjustable RF switch cell
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Application No.: US15876972Application Date: 2018-01-22
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Publication No.: US10374595B1Publication Date: 2019-08-06
- Inventor: Winfried Bakalski
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: INFINEON TECHNOLOGIES AG
- Current Assignee: INFINEON TECHNOLOGIES AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater Matsil, LLP
- Main IPC: H03K17/16
- IPC: H03K17/16

Abstract:
An RF switch includes two or more coupled RF switch cells, each RF switch cell including a transistor having a first source/drain node, a second source/drain node, and a gate node, a first varactor is coupled between the first source/drain node and the gate node, and a second varactor is coupled between the second source/drain node and the gate node.
Public/Granted literature
- US20190229720A1 SELF-ADJUSTABLE RF SWITCH CELL Public/Granted day:2019-07-25
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