Invention Grant
- Patent Title: Balun structure
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Application No.: US15792291Application Date: 2017-10-24
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Publication No.: US10374571B2Publication Date: 2019-08-06
- Inventor: Xi Ning Wang , Jen Hao Cheng , Zhi Jiang Zhou , Jin Feng Gao
- Applicant: Semiconductor Manufacturing International (Shanghai) Corporation , Semiconductor Manufacturing International (Beijing) Corporation
- Applicant Address: CN Shanghai CN Beijing
- Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION,SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION
- Current Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION,SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION
- Current Assignee Address: CN Shanghai CN Beijing
- Agency: Anova Law Group, PLLC
- Priority: CN201610942121 20161101
- Main IPC: H03H7/42
- IPC: H03H7/42 ; H01F17/00 ; H01F21/12 ; H01F27/28 ; H01L23/522

Abstract:
A balun structure is provided. The balun structure includes a substrate, a first coil structure and a second coil structure having a spiral shape and on the substrate. The first coil structure includes a first single-layer coil surrounding by first laminated coils that are connected to the first single-layer coil. The second coil structure can include a second single-layer coil and second laminated coils that are connected to the second single-layer coil. A projection of the first single-layer coil and a projection of the second single-layer coil on a surface of the substrate overlap with each other. A number of the second laminated coils is larger than or equal to a number of the first laminated coils. The second laminated coils are arranged alternately with the first laminated coils or the first single-layer coil in a plane parallel to the surface of the substrate.
Public/Granted literature
- US20180123550A1 BALUN STRUCTURE Public/Granted day:2018-05-03
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