- Patent Title: Magnetic tunnel junction based anti-fuses with cascoded transistors
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Application No.: US15231168Application Date: 2016-08-08
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Publication No.: US10374152B2Publication Date: 2019-08-06
- Inventor: Anthony J. Annunziata , John K. DeBrosse , Chandrasekharan Kothandaraman
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: G11C11/16
- IPC: G11C11/16 ; H01L43/12 ; H01L27/22 ; H01L23/525 ; H01L43/02 ; G11C17/16 ; H01L43/08

Abstract:
Magnetic tunnel junction antifuse devices are protected from degradation caused by programming voltage drop across the gates of unselected magnetic tunnel junction antifuses by connecting said magnetic tunnel junctions serially with a first field effect transistor and a second field effect transistor, the first field effect transistor having its gate connected to a positive supply voltage while the gate of the second field effect transistor is switchably connected to a programming voltage, such that when the second field effect transistor of a selected magnetic tunnel junction is switched to direct the programming voltage to program the selected magnetic tunnel junction an unswitched magnetic tunnel junction and the second field effect transistor do not experience a voltage drop across the gates thereof sufficient to degrade.
Public/Granted literature
- US20170179380A1 MAGNETIC TUNNEL JUNCTION BASED ANTI-FUSES WITH CASCODED TRANSISTORS Public/Granted day:2017-06-22
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