Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15889098Application Date: 2018-02-05
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Publication No.: US10374102B2Publication Date: 2019-08-06
- Inventor: Yuichi Onozawa , Takashi Yoshimura , Hiroshi Takishita
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kawasaki-Shi, Kanagawa
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kawasaki-Shi, Kanagawa
- Agency: Rabin & Berdo, P.C.
- Priority: JP2013-061508 20130325
- Main IPC: H01L29/872
- IPC: H01L29/872 ; H01L29/66 ; H01L29/06 ; H01L29/861 ; H01L21/225 ; H01L21/263 ; H01L21/304 ; H01L21/22 ; H01L21/265 ; H01L29/32 ; H01L29/739 ; H01L29/36 ; H01L21/268 ; H01L21/324
Abstract:
A semiconductor device includes first to fourth semiconductor regions, and first and second electrodes. The second semiconductor region is selectively disposed in a surface layer of one main surface of the first semiconductor region. The first electrode is in contact with a contact region of the second semiconductor region. The third semiconductor region is disposed in a surface layer on another main surface of the first semiconductor region, and having an impurity concentration higher than that of the first semiconductor region. The second electrode is in contact with the third semiconductor region. The fourth semiconductor region of the second conductivity type is disposed in the first semiconductor region, and disposed closer to the one main surface than the third semiconductor region. The fourth semiconductor region is disposed at least within the contact region in a plan view.
Public/Granted literature
- US20180175216A1 SEMICONDUCTOR DEVICE Public/Granted day:2018-06-21
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