On a front surface of a semiconductor base, an n−-type drift layer, a p-type base layer, an n++-type source region, and a gate trench and a contact trench penetrating the n++-type source region and the p-type base layer and reaching the n−-type drift layer are provided. The contact trench is provided separated from the gate trench. A Schottky metal is embedded in the contact trench and forms a Schottky contact with the n−-type drift layer at a side wall of the contact trench. An ohmic metal is provided at a bottom of the contact trench and forms an ohmic contact with the n−-type drift layer.