Invention Grant
- Patent Title: Semiconductor device including epitaxially formed buried channel region
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Application No.: US14840279Application Date: 2015-08-31
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Publication No.: US10374042B2Publication Date: 2019-08-06
- Inventor: Jie Deng , Pranita Kerber , Qiqing C. Ouyang , Alexander Reznicek
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/165 ; H01L29/66 ; H01L29/78 ; H01L29/16 ; H01L29/06 ; H01L29/51
Abstract:
A semiconductor device includes at least one semiconductor fin on an upper surface of a substrate. The at least one semiconductor fin includes a channel region interposed between opposing source/drain regions. A gate stack is on the upper surface of the substrate and wraps around sidewalls and an upper surface of only the channel region. The channel region is a dual channel region including a buried channel portion and a surface channel portion that completely surrounds the buried channel.
Public/Granted literature
- US20170062570A1 SEMICONDUCTOR DEVICE INCLUDING EPITAXIALLY FORMED BURIED CHANNEL REGION Public/Granted day:2017-03-02
Information query
IPC分类:
