Invention Grant
- Patent Title: Field effect transistor with controllable resistance
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Application No.: US15850098Application Date: 2017-12-21
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Publication No.: US10374041B2Publication Date: 2019-08-06
- Inventor: Yulong Li , Paul M. Solomon , Siyuranga Koswatta
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/06 ; H01L29/66 ; H01L29/68 ; H01L29/49 ; H01L29/205 ; H01L29/80 ; H01L29/78 ; H01L29/788
Abstract:
Embodiments of the invention are directed to a method and resulting structures for a semiconductor device having a controllable resistance. An example method for forming a semiconductor device includes forming a source terminal and a drain terminal of a field effect transistor (FET) on a substrate. The source terminal and the drain terminal are formed on either sides of a channel region. An energy barrier is formed adjacent to the source terminal and the channel region. A conductive gate is formed over the channel region.
Public/Granted literature
- US20190198617A1 FIELD EFFECT TRANSISTOR WITH CONTROLLABLE RESISTANCE Public/Granted day:2019-06-27
Information query
IPC分类:
