Invention Grant
- Patent Title: Method of processing a porous conductive structure in connection to an electronic component on a substrate
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Application No.: US14997601Application Date: 2016-01-18
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Publication No.: US10373868B2Publication Date: 2019-08-06
- Inventor: Martin Mischitz , Markus Heinrici , Michael Roesner , Oliver Hellmund , Caterina Travan , Manfred Schneegans , Peter Irsigler , Friedrich Kroener
- Applicant: Infineon Technologies Austria AG
- Applicant Address: AT Villach AT Graz
- Assignee: INFINEON TECHNOLOGIES AUSTRIA AG,TECHNISCHE UNIVERSITAET GRAZ
- Current Assignee: INFINEON TECHNOLOGIES AUSTRIA AG,TECHNISCHE UNIVERSITAET GRAZ
- Current Assignee Address: AT Villach AT Graz
- Agency: Viering, Jentschura & Partner mbB
- Main IPC: H01L21/78
- IPC: H01L21/78 ; H01L23/00

Abstract:
According to various embodiments, a method for processing a substrate may include: processing a plurality of device regions in a substrate separated from each other by dicing regions, each device region including at least one electronic component; wherein processing each device region of the plurality of device regions includes: forming a recess into the substrate in the device region, wherein the recess is defined by recess sidewalls of the substrate, wherein the recess sidewalls are arranged in the device region; forming a contact pad in the recess to electrically connect the at least one electronic component, wherein the contact pad has a greater porosity than the recess sidewalls; and singulating the plurality of device regions from each other by dicing the substrate in the dicing region.
Public/Granted literature
- US20170207123A1 METHOD FOR PROCESSING A SUBSTRATE AND AN ELECTRONIC DEVICE Public/Granted day:2017-07-20
Information query
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