A solid-state imaging device comprised of a first substrate on which a pixel part is formed and a second substrate on which a column readout circuit is formed along a column level connection part, a row driver is formed along a row level connection part, and a pitch conversion-use interconnect region including a slanted interconnect for pitch conversion among interconnects is formed, the pitch conversion-use interconnect region is formed at least between the end part of the column readout circuit having a third pitch shorter than the pixel part and the end part of the column level connection part and/or between the end part of the row driver having a fourth pitch shorter than the pixel part and the end part of the row level connection part.