Invention Grant
- Patent Title: Level shifter
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Application No.: US15968829Application Date: 2018-05-02
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Publication No.: US10340918B2Publication Date: 2019-07-02
- Inventor: Jun Wu
- Applicant: MStar Semiconductor, Inc.
- Applicant Address: TW Hsinchu Hsien
- Assignee: MSTAR SEMICONDUCTOR, INC.
- Current Assignee: MSTAR SEMICONDUCTOR, INC.
- Current Assignee Address: TW Hsinchu Hsien
- Agency: McClure, Qualey & Rodack, LLP
- Priority: CN201710404315 20170601
- Main IPC: H03L5/00
- IPC: H03L5/00 ; H03K19/0185 ; H03K19/20

Abstract:
A level shift includes a bias voltage providing circuit, a level shifting circuit and an output switching circuit. The level shifting circuit includes a high level shifting unit and a low level shifting unit. When the high level shifting unit is in a cut-off state, the high level shifting unit further receives a first bias voltage such that the high level shifting unit is in a partially cut-off state, accordingly increasing a response speed of the high level shifting unit. When the low level shifting unit is in a cut-off state, the low level shifting unit further receives a second bias voltage such that the low level shifting unit is in a partially cut-off state, accordingly increasing a response speed of the low level shifting unit. The level shifter of the present application provides a higher response speed.
Public/Granted literature
- US20180351556A1 LEVEL SHIFTER Public/Granted day:2018-12-06
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