Invention Grant
- Patent Title: Light emitting diode chip and fabrication method
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Application No.: US15853890Application Date: 2017-12-25
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Publication No.: US10340469B2Publication Date: 2019-07-02
- Inventor: Shu-fan Yang , Chun-Yi Wu , Chaoyu Wu , Duxiang Wang
- Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Applicant Address: CN Xiamen
- Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee Address: CN Xiamen
- Agency: Syncoda LLC
- Agent Feng Ma
- Priority: CN201510877969 20151204
- Main IPC: H01L21/66
- IPC: H01L21/66 ; H01L27/15 ; H01L51/44 ; H01L31/0468 ; H01L33/38 ; H01L33/42 ; H01L33/14

Abstract:
A light-emitting diode chip includes an electrical connection layer is arranged over the light-emitting surface of the light-emitting epitaxial laminated layer, which is not connected with isolation of the dielectric layer. After CMP treatment, the flat surface is plated with a transparent current spreading layer, which reduces horizontal conduction resistance of the transparent current spreading layer and replaces the metal spreading finger for horizontal conduction.
Public/Granted literature
- US20180122982A1 Light Emitting Diode Chip and Fabrication Method Public/Granted day:2018-05-03
Information query
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