Invention Grant
- Patent Title: Epitaxial metallic transition metal nitride layers for compound semiconductor devices
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Application No.: US14813460Application Date: 2015-07-30
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Publication No.: US10340353B2Publication Date: 2019-07-02
- Inventor: David J. Meyer , Brian P. Downey , Douglas S. Katzer
- Applicant: David J. Meyer , Brian P. Downey , Douglas S. Katzer
- Applicant Address: US DC Washington
- Assignee: The United States of America, as represented by the Secretary of the Navy
- Current Assignee: The United States of America, as represented by the Secretary of the Navy
- Current Assignee Address: US DC Washington
- Agency: US Naval Research Laboratory
- Agent Joslyn Barritt
- Main IPC: H01L29/45
- IPC: H01L29/45 ; H01L21/02 ; H01L21/04
Abstract:
A method for integrating epitaxial, metallic transition metal nitride (TMN) layers within a compound semiconductor device structure. The TMN layers have a similar crystal structure to relevant semiconductors of interest such as silicon carbide (SiC) and the Group III-Nitrides (III-Ns) such as gallium nitride (GaN), aluminum nitride (AlN), indium nitride (InN), and their various alloys. Additionally, the TMN layers have excellent thermal stability and can be deposited in situ with other semiconductor materials, allowing the TMN layers to be buried within the semiconductor device structure to create semiconductor/metal/semiconductor heterostructures and superlattices.
Public/Granted literature
- US20160035851A1 Epitaxial metallic transition metal nitride layers for compound semiconductor devices Public/Granted day:2016-02-04
Information query
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