Invention Grant
- Patent Title: Nitride semiconductor epitaxial wafer and field effect nitride transistor
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Application No.: US15691224Application Date: 2017-08-30
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Publication No.: US10340345B2Publication Date: 2019-07-02
- Inventor: Takeshi Tanaka , Naoki Kaneda , Yoshinobu Narita
- Applicant: SUMITOMO CHEMICAL COMPANY, LIMITED
- Applicant Address: JP Tokyo
- Assignee: SUMITOMO CHEMICAL COMPANY, LIMITED
- Current Assignee: SUMITOMO CHEMICAL COMPANY, LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Roberts Mlotkowski Safran Cole & Calderon P.C.
- Priority: JP2012-012920 20120125; JP2012-078469 20120330
- Main IPC: H01L29/20
- IPC: H01L29/20 ; H01L29/16 ; H01L29/778 ; H01L29/04 ; H01L21/02
Abstract:
A nitride semiconductor epitaxial wafer includes a substrate, a GaN layer provided over the substrate, and an AlGaN layer provided over the GaN layer. The GaN layer has a wurtzite crystal structure, and a ratio c/a of a lattice constant c in a c-axis orientation of the GaN layer to a lattice constant a in an a-axis orientation of the GaN layer is not more than 1.6266.
Public/Granted literature
- US20170365666A1 NITRIDE SEMICONDUCTOR EPITAXIAL WAFER AND FIELD EFFECT NITRIDE TRANSISTOR Public/Granted day:2017-12-21
Information query
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