Invention Grant
- Patent Title: Semiconductor device and manufacture thereof
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Application No.: US15863733Application Date: 2018-01-05
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Publication No.: US10340342B2Publication Date: 2019-07-02
- Inventor: JianXiang Cai , YiQi Wang , WeiLi Zhao , XiaoFang Yang , JingGuo Jia
- Applicant: Semiconductor Manufacturing International (Shanghai) Corporation , Semiconductor Manufacturing International (Beijing) Corporation
- Applicant Address: CN CN
- Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION,SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION
- Current Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION,SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION
- Current Assignee Address: CN CN
- Agency: Innovation Counsel LLP
- Priority: CN201710037076 20170119
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L27/06 ; H01L21/8249 ; H01L29/66 ; H01L29/10 ; H01L29/739 ; H01L29/732 ; H01L29/06 ; H01L29/45
Abstract:
A semiconductor device and its manufacturing method are presented. The semiconductor device includes a collection region, a base region adjacent to the collection region, an emission region adjacent to the base region, and a doped semiconductor layer on the emission region. The width of the doped semiconductor layer is larger than the width of the emission region, a conductive type (e.g., P-type or N-type) of the doped semiconductor layer is the same as a conductive type of the emission region. In this inventive concept, the width of the doped semiconductor layer on the emission region is larger than the width of the emission region, that equivalently increases the width of the emission region, which in turn increases the DC amplification factor (β) and therefore improves the overall performance of the semiconductor device.
Public/Granted literature
- US20180204911A1 SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF Public/Granted day:2018-07-19
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