Invention Grant
- Patent Title: Method and apparatus for backside illumination sensor
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Application No.: US15922514Application Date: 2018-03-15
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Publication No.: US10340303B2Publication Date: 2019-07-02
- Inventor: Dekui Qi , Fucheng Chen
- Applicant: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION , SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION
- Applicant Address: CN Shanghai CN Beijing
- Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION,SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION
- Current Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION,SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION
- Current Assignee Address: CN Shanghai CN Beijing
- Agency: Kilpatrick Townsend & Stockton LLP
- Priority: CN201710315963 20170508
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H01L21/28 ; H01L21/768 ; H01L21/3213

Abstract:
A semiconductor device includes a device substrate having a dielectric layer and a metal wire in the dielectric layer, a first opening on the metal wire and having a bottom at a depth the same as an upper surface of the metal wire, a first insulation layer including a first color filter material on sidewalls of the first opening, a second opening disposed at opposite ends of the semiconductor device and having a bottom at a depth the same as the depth of the bottom of the first opening, and a second insulation layer including a second color filter material on sidewalls of the second opening. The first opening is for leading out the metal wire to a pad. The second opening is disposed along scribe lines. The semiconductor device simplifies the process of drawing out and isolating the pads and satisfies technical requirements of a back seal ring.
Public/Granted literature
- US20180323226A1 METHOD AND APPARATUS FOR BACKSIDE ILLUMINATION SENSOR Public/Granted day:2018-11-08
Information query
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