Invention Grant
- Patent Title: Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride
-
Application No.: US15705955Application Date: 2017-09-15
-
Publication No.: US10340135B2Publication Date: 2019-07-02
- Inventor: Timothee Julien Vincent Blanquart
- Applicant: ASM IP Holding B.V.
- Applicant Address: NL Almere
- Assignee: ASM IP Holding B.V.
- Current Assignee: ASM IP Holding B.V.
- Current Assignee Address: NL Almere
- Agency: Snell & Wilmer L.L.P.
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/027 ; H01L21/04 ; H01L21/18 ; H01L21/033 ; H01L29/66 ; C01B21/06 ; C01C3/14
Abstract:
In an embodiment, a method for transferring a pattern constituted by vertical spacers arranged on a template with intervals to the template, includes depositing by plasma-enhanced cyclic deposition a layer as a spacer umbrella layer substantially only on a top surface of each vertical spacer made of silicon or metal oxide, wherein substantially no layer is deposited on sidewalls of the vertical spacers and on an exposed surface of the template, followed by transferring the pattern constituted by the vertical spacers to the template by anisotropic etching using the vertical spacers with the spacer umbrella layers.
Public/Granted literature
- US20180151346A1 METHOD OF TOPOLOGICALLY RESTRICTED PLASMA-ENHANCED CYCLIC DEPOSITION Public/Granted day:2018-05-31
Information query
IPC分类:
