Invention Grant
- Patent Title: Semiconductor device manufacturing method, substrate processing apparatus, and recording medium
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Application No.: US15627828Application Date: 2017-06-20
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Publication No.: US10340134B2Publication Date: 2019-07-02
- Inventor: Yoshiro Hirose , Atsushi Sano , Katsuyoshi Harada
- Applicant: HITACHI KOKUSAI ELECTRIC INC.
- Applicant Address: JP Tokyo
- Assignee: KOKUSAI ELECTRIC CORPORATION
- Current Assignee: KOKUSAI ELECTRIC CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Volpe and Koenig, P.C.
- Main IPC: C23C16/30
- IPC: C23C16/30 ; H01L21/02 ; C23C16/455 ; C23C16/452
Abstract:
A method includes forming a film on a substrate by performing a cycle n times (where n is an integer equal to or greater than 1), the cycle including alternately performing: performing a set m times (where m is an integer equal to or greater than 1), the set including supplying a precursor to the substrate and supplying a borazine compound to the substrate; and supplying an oxidizing agent to the substrate.
Public/Granted literature
- US20170294302A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM Public/Granted day:2017-10-12
Information query
IPC分类:
