Invention Grant
- Patent Title: Perpendicular magnetic tunnel junction device with skyrmionic assist layers for free layer switching
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Application No.: US15859384Application Date: 2017-12-30
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Publication No.: US10339993B1Publication Date: 2019-07-02
- Inventor: Manfred Ernst Schabes , Mustafa Michael Pinarbasi , Bartlomiej Adam Kardasz
- Applicant: Spin Memory, Inc.
- Applicant Address: US CA Fremont
- Assignee: Spin Memory, Inc.
- Current Assignee: Spin Memory, Inc.
- Current Assignee Address: US CA Fremont
- Agency: Arnold & Porter Kaye Scholer
- Main IPC: H01L43/08
- IPC: H01L43/08 ; G11C11/16 ; H01L43/02 ; H01L43/10 ; H01F10/32 ; H01L27/22 ; H01L43/12
Abstract:
A magnetoresistive random-access memory (MRAM) is disclosed. The MRAM device includes a perpendicular magnetic tunnel junction device having a reference layer, a free layer, and a precessional spin current magnetic layer. A skyrmionic enhancement layer is provided adjacent to the free layer. The skyrmionic enhancement layer helps to initiate the switching of the free layer.
Public/Granted literature
- US20190206466A1 PERPENDICULAR MAGNETIC TUNNEL JUNCTION DEVICE WITH SKYRMIONIC ASSIST LAYERS FOR FREE LAYER SWITCHING Public/Granted day:2019-07-04
Information query
IPC分类:
