Invention Grant
- Patent Title: RF amplifier
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Application No.: US15865145Application Date: 2018-01-08
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Publication No.: US10284148B2Publication Date: 2019-05-07
- Inventor: Marco D'Avino , Mark Pieter van der Heijden , Michel Wilhelmus Arnoldus Groenewegen , Leonardus Cornelis Nicolaas de Vreede
- Applicant: NXP B.V.
- Applicant Address: NL Eindhoven
- Assignee: NXP B.V.
- Current Assignee: NXP B.V.
- Current Assignee Address: NL Eindhoven
- Priority: EP17150707 20170109
- Main IPC: H03F1/07
- IPC: H03F1/07 ; H03F1/32 ; H03F3/195 ; H03F3/213

Abstract:
An RF amplifier is described including an input, an output, a parallel arrangement of a first branch and at least one further branch, each branch comprising a bipolar transistor in a degenerative emitter configuration having a base coupled to the input, a collector coupled to a common collector node, and an emitter degeneration impedance arranged between the emitter and a common rail. The common collector node is coupled to the output, the base of the first branch bipolar transistor is biased at a first bias voltage and the base of the at least one further branch bipolar transistor is biased at a bias voltage offset from the first bias voltage. In operation of the RF amplifier a IM3 distortion current output by the first branch bipolar transistor is in antiphase to a IM3 distortion current output by the at least one further branch bipolar transistor.
Public/Granted literature
- US20180198420A1 RF AMPLIFIER Public/Granted day:2018-07-12
Information query
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