Invention Grant
- Patent Title: Amplifier die with elongated side pads, and amplifier modules that incorporate such amplifier die
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Application No.: US15366550Application Date: 2016-12-01
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Publication No.: US10284146B2Publication Date: 2019-05-07
- Inventor: Yu-Ting Wu , Nick Yang , Joseph Gerard Schultz
- Applicant: NXP USA, Inc.
- Applicant Address: US TX Austin
- Assignee: NXP USA, Inc.
- Current Assignee: NXP USA, Inc.
- Current Assignee Address: US TX Austin
- Agent Sherry W. Schumm
- Main IPC: H03F3/68
- IPC: H03F3/68 ; H03F1/02 ; H03F3/195 ; H03F3/21 ; H01L23/66 ; H01L23/00 ; H01L23/538 ; H03F3/189 ; H03F3/24

Abstract:
An embodiment of a Doherty amplifier module includes a substrate, a first amplifier die, and a second amplifier die. The first amplifier die includes one or more first power transistors configured to amplify, along a first signal path, a first input RF signal to produce an amplified first RF signal. The second amplifier die includes one or more second power transistors configured to amplify, along a second signal path, a second input RF signal to produce an amplified second RF signal. The first and second amplifier die each also include an elongated output pad that is configured to enable a pluralities of wirebonds to be connected in parallel along the length of the elongated output pad so that the pluralities of wirebonds extend in perpendicular directions to the first and second signal paths.
Public/Granted literature
- US20180159479A1 AMPLIFIER DIE WITH ELONGATED SIDE PADS, AND AMPLIFIER MODULES THAT INCORPORATE SUCH AMPLIFIER DIE Public/Granted day:2018-06-07
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