A microelectromechanical device structure comprises a supporting structure wafer. A cavity electrode is formed within a cavity in the supporting structure wafer. The cavity electrode forms a protruding structure from a base of the cavity towards the functional layer, and the cavity electrode is connected to a defined electrical potential. The cavity electrode comprises a silicon column within the cavity in the supporting structure wafer, which is partially or entirely surrounded by a cavity. One or more cavity electrodes may be utilized for adjusting a frequency of an oscillation occurring within the functional layer.