Invention Grant
- Patent Title: Method of strain engineering and related optical device using a gallium and nitrogen containing active region
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Application No.: US15424516Application Date: 2017-02-03
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Publication No.: US10283938B1Publication Date: 2019-05-07
- Inventor: James W. Raring , Christiane Poblenz Elsass
- Applicant: Soraa Laser Diode, Inc.
- Applicant Address: US CA Goleta
- Assignee: Soraa Laser Diode, Inc.
- Current Assignee: Soraa Laser Diode, Inc.
- Current Assignee Address: US CA Goleta
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H01S5/343
- IPC: H01S5/343 ; H01S5/34
Abstract:
An optical device has a gallium and nitrogen containing substrate including a surface region and a strain control region, the strain control region being configured to maintain a quantum well region within a predetermined strain state. The device also has a plurality of quantum well regions overlying the strain control region.
Information query
