Various embodiments may relate to a semiconductor laser device, including at least one laser diode, and at least one reflection surface which reflects diffusely and which is irradiated by the laser diode during operation, and an additional light-nontransmissive housing body having a cutout. The laser diode is the sole light source of the semiconductor laser device. The laser diode is mounted immovably relative to the at least one reflection surface. Light emitted by the semiconductor laser device during operation has the same spectral components as, or fewer spectral components than, light emitted by the laser diode. An interspace between the laser diode and the at least one reflection surface is free of an optical assembly. A light-emitting area of the semiconductor laser device is greater than a light-emitting area of the laser diode by at least a factor of 100.