Invention Grant
- Patent Title: Method forming a graphene oxide-reduced graphene oxide junction
-
Application No.: US15521644Application Date: 2015-10-21
-
Publication No.: US10283783B2Publication Date: 2019-05-07
- Inventor: Di Wei , Mark Allen
- Applicant: Nokia Technologies Oy
- Applicant Address: FI Espoo
- Assignee: Nokia Technologies Oy
- Current Assignee: Nokia Technologies Oy
- Current Assignee Address: FI Espoo
- Agency: Harrington & Smith
- Priority: EP14191045 20141030
- International Application: PCT/FI2015/050714 WO 20151021
- International Announcement: WO2016/066889 WO 20160506
- Main IPC: H01M6/40
- IPC: H01M6/40 ; H01L21/263 ; H01M4/04 ; H01M6/32 ; H01M4/583

Abstract:
A method including a deposition step comprising depositing a layer of graphene oxide; a deposition step including selectively exposing a region of the deposited graphene oxide layer to electromagnetic radiation to form a region of reduced graphene oxide adjacent to a neighboring region of unexposed graphene oxide, the graphene oxide and adjacent reduced graphene oxide regions forming a junction therebetween to produce a graphene oxide-reduced graphene oxide junction layer; and repeating the deposition and exposure steps for one or more further respective layers of graphene oxide, over an underlying graphene oxide-reduced graphene oxide junction layer, to produce an apparatus in which the respective junctions of the graphene oxide-reduced graphene oxide layers, when considered together, extend in the third dimension.
Public/Granted literature
- US20170250413A1 A Method Forming a Graphene Oxide-Reduced Graphene Oxide Junction Public/Granted day:2017-08-31
Information query