Invention Grant
- Patent Title: Avalanche diode including vertical PN junction
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Application No.: US15609854Application Date: 2017-05-31
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Publication No.: US10283664B2Publication Date: 2019-05-07
- Inventor: Laurence Stark
- Applicant: STMICROELECTRONICS (RESEARCH & DEVELOPMENT) LIMITED
- Applicant Address: GB Marlow
- Assignee: STMICROELECTRONICS (RESEARCH & DEVELOPMENT) LIMITED
- Current Assignee: STMICROELECTRONICS (RESEARCH & DEVELOPMENT) LIMITED
- Current Assignee Address: GB Marlow
- Agency: Slater Matsil, LLP
- Priority: EP16194040 20161014
- Main IPC: H01L31/107
- IPC: H01L31/107 ; H01L31/02 ; H01L31/0352 ; G01J1/44 ; H01L31/103 ; H01L31/18 ; H01L29/72
Abstract:
An avalanche diode includes a PN junction with a first deep trench structure adjacent to the PN junction. An area via which photons impinge is provided, the PN junction extending substantially vertically with respect to the area. An avalanche diode array can be formed to include a number of avalanche diodes.
Public/Granted literature
- US20180108799A1 AVALANCHE DIODE AND METHOD FOR MANUFACTURING THE SAME FIELD Public/Granted day:2018-04-19
Information query
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