A semiconductor device includes a TFT (101), the TFT including a gate electrode (12), a gate insulating layer (14) covering the gate electrode, a metal oxide layer (16A) including a channel region (16c), a source contact region (16s) and a drain contact region (16d), a first electrode (18A) in contact with the source contact region, an insulating layer (22) formed on the metal oxide layer and the first electrode, the insulating layer having a first opening (22p) therein through which a portion of the metal oxide layer is exposed, and a light-transmissive second electrode (24) formed on the insulating layer and in a contact hole including the first opening, wherein the second electrode (24) is in contact with the drain contact region (16d) in the contact hole, the drain contact region (16d) is a portion of a region (17) of the metal oxide layer (16A) that is exposed through the contact hole, and as seen from a direction normal to a substrate (11), the second electrode (24) does not overlap the channel region (16c).