Invention Grant
- Patent Title: Field effect transistor device with separate source and body contacts and method of producing the device
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Application No.: US15803636Application Date: 2017-11-03
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Publication No.: US10283635B2Publication Date: 2019-05-07
- Inventor: Martin Knaipp , Georg Roehrer , Jong Mun Park
- Applicant: ams AG
- Applicant Address: AT Premstaetten
- Assignee: ams AG
- Current Assignee: ams AG
- Current Assignee Address: AT Premstaetten
- Agency: Fish & Richardson P.C.
- Priority: EP16197521 20161107
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L29/78 ; H01L29/423 ; H01L29/06 ; H01L29/10 ; H01L21/265 ; H01L23/522 ; H01L23/535 ; H01L29/66
Abstract:
The field effect transistor device comprises a substrate (1) of semiconductor material, a body well of a first type of electric conductivity in the substrate, a source region in the body well, the source region having an opposite second type of electric conductivity, a source contact (3) on the source region, a body contact region of the first type of electric conductivity in the body well, a body contact (5) on the body contact region, and a gate electrode layer (2) partially overlapping the body well. A portion (2*) of the gate electrode layer (2) is present between the source contact (3) and the body contact (5).
Public/Granted literature
- US20180130906A1 FIELD EFFECT TRANSISTOR DEVICE WITH SEPARATE SOURCE AND BODY CONTACTS AND METHOD OF PRODUCING THE DEVICE Public/Granted day:2018-05-10
Information query
IPC分类:
