Some embodiments of the present disclosure are directed to an image sensor pixel that is configured for gateless reset of a floating diffusion. Some embodiments are directed to an image sensor comprising a plurality of pixels, at least one pixel comprising a floating diffusion formed in a semiconductor substrate; a transfer gate configured to selectively cause transfer of photocharge stored in the pixel to the floating diffusion; and a reset drain formed in the semiconductor substrate and spaced away from the floating diffusion by an intervening semiconductor region having a dopant type opposite to the dopant type of the reset drain and the floating diffusion, wherein the reset drain is configured to selectively reset the electrostatic potential of the floating diffusion in response to a voltage pulse applied to the reset drain.